NEC 2SK2411-Z
The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.| Part No. | 2SK2411-Z |
|---|---|
| Datasheet | 2SK2411-Z Download |
| Manufacturer |  NEC |
| Description | SWITCHING N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 3.6 ±0.2 4.8 MAX. 1.3 ±0.2FEATURES
● Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3● Low Ciss Ciss = 1500 pF TYP.
● Built-in G-S Gate Protection Diodes
● High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 6.0 MAX. 0.5 ±0.2 2.8 ±0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) (10.0) 4 4.8 MAX. 8.5 ±0.2 1.3 ±0.2
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperatur...
