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2SK2462 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK2462 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low On-Resistance RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A) 15.0 ±0.3 3 ±0.1 4 ±0.2.
  • Low Ciss Ciss = 790 pF TYP.
  • Built-in G-S Gate Protection Diodes.
  • High Avalanche Capability Ratings.

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Other Datasheets by NEC (now Renesas Electronics)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2462 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A) 15.0 ±0.3 3 ±0.1 4 ±0.2 • Low Ciss Ciss = 790 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) 100 ± 20 ± 15 ± 60 30 2.0 150 15 22.5 V V A A W W ˚C 13.5 MIN. 12.0 ±0.2 RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A) 0.7 ±0.1 2.54 1.3 ±0.