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2SK2552C - MOSFET

General Description

The 2SK2552C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on.

0 0.15 +0.1 0.05 package and low noise, the 2SK2552C is

Key Features

  • Low noise:.
  • 108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ).
  • Containing a diode and high resistivity, short stability time is achieved during power-on.
  • Small package: SC-75 (USM) 1.0 TYP. 1.6 ±0.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK2552C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact 1.6 ±0.1 0.8 ±0.1 PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 package and low noise, the 2SK2552C is especially suitable for compact ECMs for audio or mobile devices such as cellphones. 3 0 to 0.1 2 0.2 +0.1 –0 0.5 TYP. 0.5 TYP. 1 0.6 TYP. 0.75 ±0.05 FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Containing a diode and high resistivity, short stability time is achieved during power-on.