2SK2597 Description
PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION.
2SK2597 Key Features
- High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)
- Low intermodulation distortion
- Covers all base station frequencies such as 800-MHz PDC and GSM
- High-reliability gold electrodes
- Hermetic sealed package
- Internal matching circuit
- Push-pull structure