Datasheet4U Logo Datasheet4U.com

2SK2826-S - SWITCHING N-CHANNEL POWER MOSFET

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX. ) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX. ) (VGS = 4.0 V, ID = 35 A).
  • Low Ciss : Ciss = 7200 pF (TYP. ).
  • Built-in Gate Protection Diode.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2823 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK2824 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK2825 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK2827-01 Power MOSFET Fuji Electric
2SK2828 Silicon N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2826-ZJ SWITCHING N-CHANNEL POWER MOSFET
2SK2826 SWITCHING N-CHANNEL POWER MOSFET
2SK2857 N-Channel MOSFET
2SK2858 N-Channel MOSFET
2SK2040 SWITCHING N-CHANNEL POWER MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK2826 2SK2826-S 2SK2826-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.) • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20, –10 ±70 ±280 100 1.