NEC 2SK2941
This product is n-Chanel MOS Field Effect Transistor designed high current switching application.| Part No. | 2SK2941 |
|---|---|
| Datasheet | 2SK2941 Download |
| Manufacturer |  NEC |
| Description | SWITCHING N-CHANNEL POWER MOS FET |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DIMENSIONS inmillimeters 3.0±0.3 FEATURE● Low On-Resistance RDS(on)1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A) RDS(on)2 = 22 mΩ Typ. (VGS = 4 V, ID = 18 A)
● Low Ciss Ciss = 1250 pF Typ. 10.6 MAX. 3.6±0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3±0.2 4 1 2 3 1.3±0.2 6.0 MAX.
● Built-in G-S Protection Diode 0.5±0.2 2.8±0.2
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Maximum Voltages and Currents Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)* Maximum Power Dissipation Total Power Dissipation (TA = 25 ˚C) Total Power Dissipation (TC = 25 ˚C) Maximum Temperature Channel Temperature Storage Temperature * PW ≤ 10 µs, Duty Cycle ≤ 1% Tch Tstg 150 –55 to + 125 ˚C ˚C PT PT 1.5 60 W W VDSS VGSS ID(DC) ID(Pulse) 30 ± 20 ± 35 ± 140 V V A A 0.75±0.1 2.54 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) Drain Gate Dody Diode Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD.
