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2SK2941 - SWITCHING N-CHANNEL POWER MOS FET

General Description

This product is n-Chanel MOS Field Effect Transistor designed high current switching application.

Low On-Resistance RDS(on)1 = 14 mΩ Typ.

(VGS = 10 V, ID =18 A) RDS(on)2 = 22 mΩ Typ.

Low Ciss Ciss = 1250 pF

Key Features

  • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is n-Chanel MOS Field Effect Transistor designed high current switching application. PACKAGE DIMENSIONS inmillimeters 3.0±0.3 FEATURE • Low On-Resistance RDS(on)1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A) RDS(on)2 = 22 mΩ Typ. (VGS = 4 V, ID = 18 A) • Low Ciss Ciss = 1250 pF Typ. 10.6 MAX. 3.6±0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3±0.2 4 1 2 3 1.3±0.2 6.0 MAX. • Built-in G-S Protection Diode 0.5±0.2 2.8±0.