2SK3060
Description
The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
- Low Ciss: Ciss = 2400 pF TYP
- Built-in gate protection diode
