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2SK3060 - N-CHANNEL POWER MOS FET

General Description

The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A).
  • Low Ciss: Ciss = 2400 pF TYP.
  • Built-in gate protection diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3060 TO-220AB 2SK3060-S TO-262 2SK3060-ZJ 2SK3060-Z TO-263 TO-220SMDNote Note This package is produced only in Japan.