2SK3062
Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
- Low Ciss: Ciss = 5200 pF TYP
- Built-in gate protection diode
