Datasheet Summary
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that Features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
Features
- Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
- Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
- Gate voltage rating : ±30 V
- Avalanche capability ratings <R> ORDERING INFORMATION
PART NUMBER 2SK3113B-S15-AY
Note Note Note Note
LEAD PLATING
PACKING Tube 70 p/tube
PACKAGE TO-251 (MP-3-a) typ. 0.39 g TO-251 (MP-3-b)...
