2SK3114 - SWITCHING N-CHANNEL POWER MOS FET

NEC (now Renesas Electronics)

General Description

The 2SK3114 is N-channel DMOS FET device that

Key Features

a low gate charge and excellent switching characteristics, and designed for high voltage.

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2SK3114 switching n-channel power mos fet by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SK3114
Manufacturer	NEC (now Renesas Electronics)
File Size	92.18 KB
Description	SWITCHING N-CHANNEL POWER MOS FET
Datasheet	2SK3114 Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number	Description
2SK3110	N-Channel MOSFET
2SK3111	N-Channel MOSFET
2SK3112	SWITCHING N-CHANNEL POWER MOSFET
2SK3113	SWITCHING N-CHANNEL POWER MOSFET
2SK3113B	MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.