2SK3114 Datasheet | NEC

DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that Features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. Features - Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) - Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) - Gate voltage rating: ±30 V - Avalanche capability ratings - Isolated TO-220 package (Isolated...