2SK3306 - N-Channel MOSFET

NEC (now Renesas Electronics)

General Description

The 2SK3306 is N-Channel DMOS FET device that

Key Features

a low gate charge and excellent switching characteristics, and designed for high voltage.

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2SK3306 n-channel mosfet by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SK3306
Manufacturer	NEC (now Renesas Electronics)
File Size	69.91 KB
Description	N-Channel MOSFET
Datasheet	2SK3306 Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number	Description
2SK3304	N-Channel MOSFET
2SK3305	N-Channel MOSFET
2SK3307	SWITCHING N-CHANNEL POWER MOSFET
2SK3322	SWITCHING N-CHANNEL POWER MOSFET
2SK3324	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F) DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : 5 QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.