2SK3353
2SK3353 is N-Channel MOSFET manufactured by NEC.
DESCRIPTION
The 2SK3353 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
- Super low on-state resistance: 5 5 RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4 V, ID = 41 A)
- Built-in gate protection diode
- Low Ciss: Ciss = 4650 p F TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS(AC) ID(DC)
Note1
60 ±20 ±82 ±328 95 1.5 150
- 55 to +150 45 202
V V A A W W °C °C A m J
5 Drain Current (pulse)
ID(pulse) PT PT Tch Tstg
Note2 Note2
5 Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature
5 5
Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 5 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient Rth(ch-C) Rth(ch-A) 1.32 83.3 °C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14130EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
©
5 ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 82 A, VGS = 0 V IF...
