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2SK3479 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A).
  • Low Ciss: Ciss = 11000 pF TYP.
  • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3479 2SK3479-S 2SK3479-ZJ 2SK3479-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Built-in gate protection diode Note TO-220SMD package is produced only in Japan.