NEC 2SK3570
The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.| Part No. | 2SK3570 |
|---|---|
| Datasheet | 2SK3570 Download |
| Manufacturer |  NEC |
| Description | Switching N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
5 ORDERING INFORMATION PART NUMBER 2SK3570 2SK3570-S 2SK3570-ZK PACKAGE TO-220AB TO-262 TO-263 TO-220SMD NoteFEATURES
●4.5V drive available.●Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)
●Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
●Built-in gate protection diode
●Surface mount device available 2SK3570-Z Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±48 ±160 1.5 29 150 −55 to +150 V V A A W W °C °C Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country.
