2SK3642 Datasheet | NEC

DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3642-ZK PACKAGE TO-252 (MP-3ZK) FEATURES - Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 16 mΩ MAX. (VGS = 4.5 V, ID = 18 A) - Low Ciss: Ciss = 1100 p F TYP. - Built-in gate protection diode (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 ±20 ±64 ±190 36 1.0 150 - 55 to + 150 25 62 V V A A W W °C °C A m J Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15970EJ4V0DS00 (4th edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 m A VDS = 10 V, ID = 32 A VGS = 10 V, ID = 32 A VGS = 4.5 V, ID = 18 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 32 A VGS = 10 V RG = 10...