2SK3659 Datasheet | NEC

DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3659 PACKAGE Isolated TO-220 FEATURES - 4.5V drive available. - Low on-state resistance, RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A) - Low gate charge, QG = 32 n C TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A) - Built-in gate protection diode. - Avalanche capability ratings. - Isolated TO-220 package. ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25°C) Drain current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±65 ±260 2.0 25 150 - 55 to +150 35 122 V V A A W W °C °C A m J Total power dissipation (TA = 25°C) Total power dissipation (TC = 25°C) Channel temperature Storage temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16251EJ2V0DS00 (2nd edition) Date Published June 2002 NS CP (K) Printed in Japan © ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse...