Datasheet4U Logo Datasheet4U.com

2SK3659 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3659 is N-channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, designed for low voltage high current.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3659 N-Channel MOSFET Transistor Inchange Semiconductor
2SK365 N-Channel MOSFET Toshiba Semiconductor
2SK3650-01L N-Channel MOSFET Transistor Inchange Semiconductor
2SK3650-01L N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK3650-01S N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3653B N-Channel MOSFET
2SK3653C MOSFET
2SK3634 SWITCHING N-CHANNEL POWER MOSFET
2SK3635 SWITCHING N-CHANNEL POWER MOSFET
2SK3638 SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3659 PACKAGE Isolated TO-220 FEATURES •4.5V drive available. •Low on-state resistance, RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A) •Low gate charge, QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A) •Built-in gate protection diode. •Avalanche capability ratings. •Isolated TO-220 package.