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2SK3663 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3663 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. www.DataSheet4U.com The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.