Datasheet4U Logo Datasheet4U.com

2SK3715 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A).
  • Low C iss: C iss = 8400 pF TYP.
  • Built-in gate protection diode (Isolated TO-220).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3715 N-Channel MOSFET Transistor Inchange Semiconductor
2SK371 N-Channel MOSFET Toshiba Semiconductor
2SK3710 MOSFET Sanken
2SK3710 N-Channel MOSFET INCHANGE
2SK3711 N-Channel MOSFET Sanken electric

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3712 SWITCHING N-CHANNEL POWER MOSFET
2SK3713 SWITCHING N-CHANNEL POWER MOSFET
2SK3714 SWITCHING N-CHANNEL POWER MOSFET
2SK3716 SWITCHING N-CHANNEL POWER MOSFET
2SK3717 SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3715 PACKAGE Isolated TO-220 FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A) • Low C iss: C iss = 8400 pF TYP. • Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±75 ±300 40 2.