NEC 2SK3749
The 2SK3749 is an N-channel vertical MOS FET. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.| Part No. | 2SK3749 |
|---|---|
| Datasheet | 2SK3749 Download |
| Manufacturer |  NEC |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an PACKAGE DRAWING (Unit: mm) 2.1 ± 0.1 1.25 ± 0.1 2.0 ± 0.2 1 3 0.9 ± 0.1● Because of its high input impedance, there’s no need to consider drive current ORDERING INFORMATION PART NUMBER PACKAGE SC-70 (SSP) 2SK3749 Marking: G27 1 : Source 2 : Gate 3 : Drain
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note EQUIVALENT CIRCUIT 50 ±7.0 ±100 ±200 150 150 −55 to +150 V V mA mA mW °C °C Gate Protection Diode Gate Body Diode Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 ms, Duty Cycle ≤ 50% 0 to 0.1 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. The information in this document is subject to change without notice.
