2SK3749
DESCRIPTION
The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1 1.25 ± 0.1
2.0 ± 0.2
0.9 ± 0.1
- Because of its high input impedance, there’s no need to consider drive current
ORDERING INFORMATION
PART NUMBER PACKAGE SC-70 (SSP)
2SK3749 Marking: G27
1 : Source 2 : Gate 3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
50 ±7.0 ±100 ±200 150 150
- 55 to +150 V V m A m A m W °C °C
Gate Protection Diode Gate Body Diode Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 ms, Duty Cycle ≤ 50%
0 to 0.1
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this...
