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2SK3755 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A).
  • Low C iss: C iss = 1200 pF TYP.
  • Built-in gate protection diode (Isolated TO-220).

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2SK3712 SWITCHING N-CHANNEL POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3755 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3755 PACKAGE Isolated TO-220 FEATURES • Super low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A) • Low C iss: C iss = 1200 pF TYP. • Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±45 ±140 24 2.