NEC 2SK3812
The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | 2SK3812 |
|---|---|
| Datasheet | 2SK3812 Download |
| Manufacturer |  NEC |
| Description | SWITCHING N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
ORDERING INFORMATION PART NUMBER 2SK3812-ZP PACKAGE TO-263 (MP-25ZP)FEATURES
● Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)● High current rating: ID(DC) = ±110 A
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-263) 60 ±20 ±110 ±440 213 1.5 150 −55 to +150 397 63 397 V V A A W W °C °C mJ A mJ VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tch(peak) ≤ 150°C, RG = 25 Ω The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
