2SK3812
DESCRIPTION
The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3812-ZP PACKAGE TO-263 (MP-25ZP)
FEATURES
- Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)
- High current rating: ID(DC) = ±110 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
(TO-263) 60 ±20 ±110 ±440 213 1.5 150
- 55 to +150 397 63 397 V V A A W W °C °C m J A m J
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy
Note2 Note3 Note3
EAS IAR EAR
Repetitive Avalanche Current Repetitive Avalanche Energy
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH...
