2SK3900
Description
The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
- Low C iss: C iss = 3500 pF TYP
- Built-in gate protection diode (TO-263)
