2SK4058 - MOS FIELD EFFECT TRANSISTOR

NEC (now Renesas Electronics)

General Description

The 2SK4058 is N-channel MOSFET device that

Key Features

a low on-state resistance and excellent switching characteristics, and designed for low voltage high current.

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2SK4058 mos field effect transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SK4058
Manufacturer	NEC (now Renesas Electronics)
File Size	309.32 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SK4058 Datasheet

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2SK4057	MOS FIELD EFFECT TRANSISTOR
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2SK4070	MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low QGD: QGD = 6.5 nC TYP. • 4.5 V drive available ORDERING INFORMATION PART NUMBER 2SK4058(1)-S27-AY Note 2SK4058-ZK-E1-AY Note 2SK4058-ZK-E2-AY Note PACKAGE TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in external electrode.