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2SK4075 - MOS FIELD EFFECT TRANSISTOR

General Description

The 2SK4075 is N-channel MOS FET designed for high current switching applications.

typ.

Key Features

  • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A).
  • Low Ciss: Ciss = 2900 pF TYP.
  • Logic level drive type.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn (Tin) 2SK4075-ZK-E2-AY PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) typ. 0.27 g FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF TYP.