2SK4080 - MOS FIELD EFFECT TRANSISTOR

NEC (now Renesas Electronics)

General Description

The 2SK4080 is N-channel MOS FET device that

Key Features

a low on-state resistance and excellent switching characteristics, and designed for low voltage high current.

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2SK4080 mos field effect transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SK4080
Manufacturer	NEC (now Renesas Electronics)
File Size	262.28 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SK4080 Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number	Description
2SK4081	SWITCHING N-CHANNEL POWER MOSFET
2SK4082	SWITCHING N-CHANNEL POWER MOSFET
2SK4027	N-Channel MOSFET
2SK4028	N-Channel MOSFET
2SK4035	SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4080 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low QGD: QGD = 6.3 nC TYP. • 4.5 V drive available ORDERING INFORMATION PART NUMBER 2SK4080(1)-S27-AY Note 2SK4080-ZK-E1-AY Note 2SK4080-ZK-E2-AY Note PACKAGE TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in external electrode.