2SK4143 Datasheet | NEC

DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES - Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) - Low input capacitance Ciss = 820 p F TYP. - Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK4143-S17-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube PACKAGE Isolated TO-220 typ. 2.2 g Note Pb-free (This product does not contain Pb in the external electrode). ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±20 ±50 20 2.0 150 - 55 to +150 15 22.5 V V A A W W °C °C A m J (Isolated TO-220) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 6.25 62.5 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18772EJ1V0DS00 (1st edition) Date Published May 2007 NS Printed in Japan ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 m A VDS = 10...