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2SK660 - N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

General Description

The 2SK660 is suitable for converter of ECM.

Key Features

  • Compact package.
  • High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA).
  • Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz).
  • Includes diode and high resistance at G - S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA) • Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) • Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK660 PACKAGE SST ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature Note VGS = –1.0 V Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.