2SK660
DESCRIPTION
The 2SK660 is suitable for converter of ECM.
FEATURES
- pact package
- High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
- Low capacitance Ciss = 4.5 p F (VDS = 5 V, VGS = 0 V, f = 1 MHz)
- Includes diode and high resistance at G
- S
ORDERING INFORMATION
PART NUMBER 2SK660 PACKAGE SST
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature Note VGS =
- 1.0 V Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
Note
VDSX VGDO ID IG PT Tj Tstg
- 20 10 10 100 125
- 55 to +125
V V m A m A m W °C °C
EQUIVALENT CIRCUIT
Drain
Gate
Source
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