325S01
NONLINEAR MODEL
SCHEMATIC
NE325S01
CGD_PKG 0.001p F Ldx DRAIN Lgx GATE Rgx 6 ohms 0.69n H Lsx 0.07n H Rsx 0.06 ohms Q1 0.6n H Rdx 6 ohms
CGS_PKG 0.07p F
CDS_PKG 0.05PF
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.8 0 8 0.103 0.092 0.08 2 1 0.715 3e-13 1.22 0 0 4e-12 0.13e-12 5000 1e-9 0.3e-12 0.02e-12 0.3 0.1 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 3 2 2 0 0 1 27 3 1.43 0 0 1
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 m A to 30 m A IDSS = 59.9 ma @ VGS = 0, VDS = 2 V Date: 2/98
(1) Series IV Libra TOM Model
EXCLUSIVE NORTH AMERICAN AGENT FOR
California Eastern Laboratories
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
PRINTED IN USA ON RECYCLED PAPER -10/98
CALIFORNIA EASTERN...
