Datasheet4U Logo Datasheet4U.com

3SK135A - N-Channel MOSFET

Key Features

  • Suitable for use as RF amplifier in UHF TV tuner.
  • Low Crss : 0.02 pF TYP.
  • High Gps : 18 dB TYP.
  • Low NF : 2.7 dB TYP.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3SK101 Silicon N-Channel Transistor Toshiba
3SK102 Silicon N-Channel Transistor Toshiba
3SK103 Silicon N-Channel MOSFET ETC
3SK113 GaAs N-Channel Dual Gate FET Hitachi
3SK114 Silicon N-Channel Transistor Toshiba

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
3SK131 MOS FIELD EFFECT TRANSISTOR
3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
3SK122 MOS Field Effect Transistor
3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
3SK177 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP. PACKAGE DIMENSIONS in millimeters 0.4+0.1 –0.05 2 2.8+0.2 –0.3 1.5+0.2 –0.1 –0.06 0.16 +0.1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S* VG2S* ID PT Tch Tstg 5˚ 0 to 0.1 20 ± 10 ± 10 25 200 150 –65 to +150 *RL ≥ 10 kΩ V V V mA mW ˚ C ˚ C 1 0.6+0.1 –0.05 5˚ +0.1 5˚ 0.4–0.05 +0.2 1.1–0.1 0.8 4 (1.9) 1. Source 2. Drain 3. Gate 2 4. Gate 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 2.9±0.