78F0058 Datasheet PDF

User’s Manual µPD780058, 780058Y Subseries 8-Bit Single-Chip Microcontrollers µPD780053 µPD780054 µPD780055 µPD780056 µPD780058 µPD780058B µPD78F0058 µPD780053(A) µPD780054(A) µPD780055(A) µPD780056(A) µPD780058B(A) µPD780053Y µPD780054Y µPD780055Y µPD780056Y µPD780058BY µPD78F0058Y µPD780053Y(A) µPD780054Y(A) µPD780055Y(A) µPD780056Y(A) µPD780058BY(A) Document No. U12013EJ3V2UD00 (3rd edition) Date Published February 2003 N CP (K) 1997, 2003 Printed in Japan [MEMO] 2 User's Manual U12013EJ3V2UD NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.