88N04
88N04 is NP88N04 manufactured by NEC.
.Data Sheet.co.kr
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R>
ORDERING INFORMATION
PART NUMBER NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE-E1-AY NP88N04KHE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g
NP88N04CHE-S12-AZ NP88N04DHE-S12-AY NP88N04MHE-S18-AY NP88N04NHE-S18-AY
Sn-Ag-Cu Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design
(TO-220)
Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
- Low input capacitance Ciss = 7300 p F TYP.
- Built-in gate protection diode (TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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Document No. D14236EJ8V0DS00 (8th edition) Date Published October 2007 NS Printed in...
