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A1757 - UPA1757

General Description

designed for power management application of notebook computers, and Li-ion battery application.

Key Features

  • Dual MOS FET chips in small package.
  • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX. ) (VGS = 4.5 V, ID = 3.5 A) 1.44 6.0 ±0.3 4.4 0.8 RDS(on)2 = 32 mΩ (MAX. ) (VGS = 2.5 V, ID = 3.5 A).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 1.8 Max.
  • Low Ciss Ciss = 750 pF Typ. 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10.
  • 0.05 Ordering information Part Number Package Power SO.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description This product is Dual N-Channel MOS Field Effect Transistor www.DataSheet4U.com Package Drawing (Unit : mm) designed for power management application of notebook computers, and Li-ion battery application. 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 Features • Dual MOS FET chips in small package • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A) 1.44 6.0 ±0.3 4.4 0.8 RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.8 Max. • Low Ciss Ciss = 750 pF Typ. 0.15 0.05 Min. 0.5 ±0.2 0.10 1.