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B1261-Z - 2SB1261-Z

Description

Switching, especially in Hybrid Integrated Circuits.

Features

  • High hFE hFE = 100 to 400.
  • Low VCE(sat) VCE(sat) ≤ 0.3 V.

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Datasheet preview – B1261-Z

Datasheet Details

Part number B1261-Z
Manufacturer NEC
File Size 1.31 MB
Description 2SB1261-Z
Datasheet download datasheet B1261-Z Datasheet
Additional preview pages of the B1261-Z datasheet.

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Full PDF Text Transcription

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DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −60 V Emitter to Base Voltage VEBO −7.0 V Collector Current (DC) IC(DC) −3.0 A Collector Current (pulse) Note 1 IC(pulse) −5.0 A Base Current (DC) IB(DC) −0.5 A Total Power Dissipation (TA = 25°C) Note 2 PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 10 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2.
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