B1669 - 2SB1669

NEC (now Renesas Electronics)

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

High DC current amplifier rate hFE ≥ 100 (VCE =.
5.0 V, IC =.
0.5 A).
Z type available for surface mounting supported prodcuts.

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B1669 2sb1669 by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	B1669
Manufacturer	NEC (now Renesas Electronics)
File Size	164.08 KB
Description	2SB1669
Datasheet	B1669 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. ORDERING INFORMATION Part No. 2SB1669 2SB1669-S 2SB1669-Z Package TO-220AB TO-262 TO-220SMD FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0 V, IC = −0.