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C2690 - NPN SILICON EPITAXIAL TRANSISTOR

General Description

These products are general purpose transistors designed for use in audio and radio frequency power amplifiers.

Key Features

  • Suitable for use in driver stage of 50 to 100 W audio amplifiers and output stage of TV vertical deflection circuit.
  • High voltage and high fT VCEO = 120 V (2SC2690) / 160 V (2SC2690A) fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A).
  • Complementary to the 2SA1220 and 2SA1220A PNP transistors.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
C2690A NPN SILICON EPITAXIAL TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SC2690,2690A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION DESCRIPTION These products are general purpose transistors designed for use in audio and radio frequency power amplifiers. FEATURES • Suitable for use in driver stage of 50 to 100 W audio amplifiers and output stage of TV vertical deflection circuit. • High voltage and high fT VCEO = 120 V (2SC2690) / 160 V (2SC2690A) fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A) • Complementary to the 2SA1220 and 2SA1220A PNP transistors. ORDERING INFORMATION PART NUMBER PACKAGE 2SC2690 2SC2690-AZ Note TO-126 (MP-5) TO-126 (MP-5) 2SC2690A TO-126 (MP-5) 2SC2690A-AZ Note TO-126 (MP-5) Note Pb-free (This product does not contain Pb in external electrode.