C2721 - 2SC2721

NEC (now Renesas Electronics)

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

Complementary transistor with 2SA1154.
High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V.

📥 Download Datasheet

C2721 2sc2721 by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	C2721
Manufacturer	NEC (now Renesas Electronics)
File Size	105.36 KB
Description	2SC2721
Datasheet	C2721 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
C2703	2SC2703	Toshiba
C2705	2SC2705	Toshiba Semiconductor
C2710	2SC2710	Toshiba
C2712	Silicon NPN Transistors	Toshiba
C2712	2SC2712	Weitron Technology

Other Datasheets by NEC (now Renesas Electronics)

Part Number	Description
C271C	UPC271
C2756	NPN Silicon Transistor
C2762	UPC2762
C2762	2SC2762
C2784	2SC2784

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 60 60 5.0 0.7 1.