Click to expand full text
DATA SHEET
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES • Ideal for use of high voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 160
140/160 5.0 500 1.0 1.