• Part: C3356
  • Description: 2SC3356
  • Manufacturer: NEC
  • Size: 100.39 KB
Download C3356 Datasheet PDF
NEC
C3356
DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. - 0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 - 0.15 +0.1 FEATURES - Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = 1.1 d B TYP., Ga = 11 d B TYP. @VCE = 10 V, IC = 7 m A, f = 1.0 GHz - High Power Gain MAG = 13 d B TYP. @VCE = 10 V, IC = 20 m A, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.0 100 200 150 to +150 V V V m A m W C C Marking 1.1 to 1.4 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain...