C3587 Datasheet 2sc3587

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET .. SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN.

Datasheet Details

Part number	C3587
Manufacturer	NEC (now Renesas Electronics)
File Size	109.88 KB
Description	2SC3587
Datasheet	C3587_NEC.pdf

Key Features

Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz.
High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN. 45 °.

More Datasheets from NEC (now Renesas Electronics)

Part Number	Description
C358C	UPC358
C3568	2SC3568
C3570	2SC3570

Datasheet Details

Key Features

More Datasheets from NEC (now Renesas Electronics)

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