C3622 Description
DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFIERS AND SWITCHING.
C3622 Key Features
- High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
- Low VCE(sat)
- High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)