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C4783 - 2SC4783

General Description

The 2SC4783 is NPN silicon epitaxial transistor.

0.05

Key Features

  • 1.6 ± 0.1 0.8 ± 0.1.
  • High DC current gain: hFE2 = 200 TYP.
  • High voltage: VCEO = 50 V 3 0 to 0.1 2 0.2 +0.1.
  • 0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1.

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Other Datasheets by NEC (now Renesas Electronics)

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4783 is NPN silicon epitaxial transistor. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05 FEATURES 1.6 ± 0.1 0.8 ± 0.1 • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note1 Note2 VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg 60 50 5.0 100 200 200 150 –55 to + 150 V V V mA mA mW °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range 1: Emitter 2: Base 3: Collector Notes 1.