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C5177 - 2SC5177

Key Features

  • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4.
  • 0.05 +0.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 –0.15 +0.1 • Mini-Mold package EIAJ: SC-59 0.95 ORDERING INFORMATION PART NUMBER 2SC5177-T1 QUANTITY 3 000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (emitter) and No. 2 (base) facing the perforations 2.9±0.2 2 T84 0.95 0.3 2SC5177-T2 3 000 units/reel Marking 0.16 –0.06 +0.