Datasheet Summary
DATA SHEET
SILICON TRANSISTOR
2SC5177
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
Features
- Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
- 0.05
+0.1
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2 1.5 0.65
- 0.15
+0.1
- Mini-Mold package EIAJ: SC-59
ORDERING INFORMATION
PART NUMBER 2SC5177-T1 QUANTITY 3 000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (emitter) and No. 2 (base) facing the perforations
2.9±0.2
T84
2SC5177-T2
3 000...