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D1581 - 2SD1581

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA).
  • Low collector saturation voltage VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. PACKAGE DRAWING (UNIT: mm) FEATURES • Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA) • Low collector saturation voltage VCE(sat) = 0.18 V TYP. (@ IC = 1.