| Part number | D17P137ACT |
|---|---|
| Datasheet | D17P137ACT_NEC.pdf |
| File Size | 1.21 MB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | UPD17P137ACT |
|
|
U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has...
See all NEC (now Renesas Electronics) datasheets
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