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D2161 - 2SD2161

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.0 A).
  • Full mold package that does not require an insulating board or insulation bushing.

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Datasheet preview – D2161

Datasheet Details

Part number D2161
Manufacturer NEC
File Size 158.55 KB
Description 2SD2161
Datasheet download datasheet D2161 Datasheet
Additional preview pages of the D2161 datasheet.

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Full PDF Text Transcription

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DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. ORDERING INFORMATION Ordering Name 2SD2161 Package Isolated TO-220 (Isolated TO-220) FEATURES • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.
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