Datasheet4U Logo Datasheet4U.com

D2217 - NPN SILICON EPITAXIAL TRANSISTOR

Datasheet Summary

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

📥 Download Datasheet

Datasheet preview – D2217

Datasheet Details

Part number D2217
Manufacturer NEC
File Size 96.55 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet D2217 Datasheet
Additional preview pages of the D2217 datasheet.

📁 Similar Datasheet

  • D221 - D200 Series / DC/DC Converters (MicroPower Direct)
  • D2210 - N-Channel 20V MOSFET (VBsemi)
  • D2210UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2211UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2212UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2213UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2214UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2218 - 2SD2218 (Sanyo)
  • D2218UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2219 - 2SD2219 (Sanyo)
Other Datasheets by NEC

    Full PDF Text Transcription

    Click to expand full text
    DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers such as pulse motor drivers and relay drivers in OA and FA equipment. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
    Published: |