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D780056 - UPD780056

Download the D780056 datasheet PDF. This datasheet also covers the D78F0058 variant, as both devices belong to the same upd780056 family and are provided as variant models within a single manufacturer datasheet.

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (D78F0058-NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
D780206GF UPD780206 NEC Electronics
D78040 Signal Processor Sanyo
D786 2SD786 Rohm
D788 2SD788 Hitachi Semiconductor
D789 2SD789 Hitachi Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
D780053 UPD780053
D780054 UPD780054
D780055 UPD780055
D780058 UPD780058
D780016YGF022 UPD780016Y

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
User’s Manual µPD780058, 780058Y Subseries 8-Bit Single-Chip Microcontrollers µPD780053 µPD780053Y µPD780054 µPD780054Y µPD780055 µPD780055Y µPD780056 µPD780056Y µPD780058 µPD780058BY µPD780058B µPD78F0058Y µPD78F0058 µPD780053Y(A) µPD780053(A) µPD780054Y(A) µPD780054(A) µPD780055Y(A) µPD780055(A) µPD780056Y(A) µPD780056(A) µPD780058BY(A) µPD780058B(A) Document No. U12013EJ3V2UD00 (3rd edition) Date Published February 2003 N CP (K) Printed in Japan 1997, 2003 [MEMO] 2 User's Manual U12013EJ3V2UD NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation.