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J132-Z - MOS FIELD EFFECT POWER TRANSISTORS

This page provides the datasheet information for the J132-Z, a member of the J132 MOS FIELD EFFECT POWER TRANSISTORS family.

Datasheet Summary

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • Gate drive available at logic level (VGS =.
  • 4 V).
  • High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω).
  • 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC.

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Datasheet preview – J132-Z

Datasheet Details

Part number J132-Z
Manufacturer NEC
File Size 130.29 KB
Description MOS FIELD EFFECT POWER TRANSISTORS
Datasheet download datasheet J132-Z Datasheet
Additional preview pages of the J132-Z datasheet.

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Other Datasheets by NEC
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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω) • 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
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