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J598 Datasheet PDF

NEC J598

The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
Part No. J598
Datasheet J598 Download
Manufacturer
NEC
Description P-Channel Power MOSFET
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J598 datasheet page 1 preview

DESCRIPTION

ORDERING INFORMATION PART NUMBER 2SJ598 2SJ598-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)

FEATURES

● Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)
● Low Ciss: Ciss = 720 pF TYP.
● Built-in gate protection diode
● TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251) –60 m20 m12 m30 23 1.0 150 –55 to +150 –12 14.4 V V A A W W °C °C A mJ (TO-252) VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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