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J598 - 2SJ598

General Description

The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Key Features

  • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 6 A) RDS(on)2 = 190 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 6 A).
  • Low Ciss: Ciss = 720 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
J599 2SJ599

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ598 2SJ598-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ciss: Ciss = 720 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251) –60 m20 m12 m30 23 1.0 150 –55 to +150 –12 14.