Description
The 2SK1658 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply.
0 0.65 0.65
2.1 ±0.1 1.25 ±0.1
PACKAGE DRAWING (Unit : mm)
Features
- Directly driven by ICs having a 3 V power supply.
- Has low Gate Leakage Current IGSS = ±5 nA MAX. (VGS = ±3.0 V)
G
0.9 ±0.1
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg
30 ±7 ±100 ±200 150 150.
- 55 to +80.
- 55 to +150
V V mA mA mW °C °C °C
Total Power Dissipation (TA = 25°C) Channel Temperature Operating Temperature Storage Temper.
K1658 Datasheet
